| TYPE | DESCRIPTION |
|---|
| Mounting Style | Surface Mount |
| Number of Pins | 3 Pin |
| Case/Package | TO-268-3 |
| Number of Positions | 3 Position |
| Power Dissipation | 300 W |
| Breakdown Voltage (Collector to Emitter) | 1200 V |
| Reverse recovery time | 100 ns |
| Input Power (Max) | 300 W |
| Operating Temperature (Max) | 150 ℃ |
| Operating Temperature (Min) | -55 ℃ |
| TYPE | DESCRIPTION |
|---|
| Product Lifecycle Status | Active |
| Packaging | Tube |
| Size-Length | 16.05 mm |
| Size-Width | 14 mm |
| Size-Height | 5.1 mm |
| Operating Temperature | -55℃ ~ 150℃ (TJ) |
High speed Low Vsat PT
●IGBTs 3-20 kHz switching
●V
●CES
●= 1200V
●I
●C110
●= 30A
●V
●CE(sat) ≤
●£
●3.5
●V
●Tfi(typ)
●= 204ns
●Features
●Optimized for low conduction and switching losses
●Square RBSOA
●Anti-parallel ultra fast diode
●International standard packages
●Applications
●Power Inverters
●UPS
●Motor Drives
●SMPS
●PFC Circuits
●Welding Machines
IXYS Semiconductor
7 Pages / 0.21 MByte
IXYS Semiconductor
1 Pages / 0.01 MByte
IXYS Semiconductor
IXYS SEMICONDUCTOR IXGT30N120B3D1 IGBT Single Transistor, 50A, 2.96V, 300W, 1.2kV, TO-268, 3Pins New
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