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IXSN35N120AU1
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IXSN35N120AU1 Datasheet PDF - IXYS Semiconductor

Manufacturer:IXYS Semiconductor
Category:IGBTs
Case Package:SOT-227-4
Description:Trans IGBT Chip N-CH 1200V 70A 300000mW 4Pin SOT-227B
Documentation:IXSN35N120AU1 Datasheet (17 Pages)
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IXSN35N120AU1 Datasheet PDF (17 Pages)
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IXSN35N120AU1 Specifications

TYPEDESCRIPTION
Mounting StyleSurface Mount
Number of Pins4 Pin
Case/PackageSOT-227-4
Power Dissipation300000 mW
Breakdown Voltage (Collector to Emitter)1200 V
Input Capacitance (Cies)3.9nF @25V
Input Power (Max)300 W
Operating Temperature (Max)150 ℃
Operating Temperature (Min)-55 ℃
Power Dissipation (Max)300000 mW
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IXSN35N120AU1 Size & Package

TYPEDESCRIPTION
Product Lifecycle StatusObsolete
PackagingTube
Size-Length38.23 mm
Size-Width25.42 mm
Size-Height9.6 mm
Operating Temperature-55℃ ~ 150℃ (TJ)
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IXSN35N120AU1 Documents

IXSN35N120AU1 Datasheet
IXYS Semiconductor
17 Pages / 1.93 MByte
IXSN35N120AU1 Other Datasheet PDF
IXYS Semiconductor
14 Pages / 0.8 MByte

IXSN35N120 Documents

IXSN35N120AU1 Datasheet PDF
IXYS Semiconductor
Trans IGBT Chip N-CH 1200V 70A 300000mW 4Pin SOT-227B
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