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IXTH10N100D
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IXTH10N100D Datasheet PDF - IXYS Semiconductor

Manufacturer:IXYS Semiconductor
Category:MOSFETs
Case Package:TO-247-3
Description:MOSFET N-CH 1000V 10A TO-247
Documentation:IXTH10N100D Datasheet (5 Pages)
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IXTH10N100D Datasheet PDF (5 Pages)
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IXTH10N100D Specifications

TYPEDESCRIPTION
Mounting StyleThrough Hole
Case/PackageTO-247-3
Number of Channels1 Channel
Drain to Source Resistance (on) (Rds)1.4 Ω
Power Dissipation400 W
Drain to Source Voltage (Vds)1000 V
Breakdown Voltage (Drain to Source)1000 V
Rise Time85 ns
Input Capacitance (Ciss)2500pF @25V(Vds)
Fall Time75 ns
Operating Temperature (Max)150 ℃
Operating Temperature (Min)55 ℃
Power Dissipation (Max)400W (Tc)
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IXTH10N100D Size & Package

TYPEDESCRIPTION
Product Lifecycle StatusActive
PackagingTube
Size-Length16.26 mm
Size-Width5.3 mm
Size-Height21.46 mm
Operating Temperature-55℃ ~ 150℃ (TJ)
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IXTH10N100D Documents

IXTH10N100D Datasheet
IXYS Semiconductor
5 Pages / 0.13 MByte
IXTH10N100D Other Datasheet PDF
IXYS Semiconductor
5 Pages / 0.12 MByte

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