| TYPE | DESCRIPTION |
|---|
| Mounting Style | Through Hole |
| Number of Pins | 3 Pin |
| Voltage Rating (DC) | 500 V |
| Current Rating | 24.0 A |
| Case/Package | TO-247-3 |
| Number of Positions | 3 Position |
| Drain to Source Resistance (on) (Rds) | 0.23 Ω |
| Polarity | N-Channel |
| Power Dissipation | 300 W |
| Threshold Voltage | 4 V |
| Drain to Source Voltage (Vds) | 500 V |
| Continuous Drain Current (Ids) | 24.0 A |
| Rise Time | 33 ns |
| Input Capacitance (Ciss) | 4200pF @25V(Vds) |
| Input Power (Max) | 300 W |
| Fall Time | 30 ns |
| Operating Temperature (Max) | 150 ℃ |
| Operating Temperature (Min) | -55 ℃ |
| Power Dissipation (Max) | 300W (Tc) |
| TYPE | DESCRIPTION |
|---|
| Product Lifecycle Status | Obsolete |
| Packaging | Bulk, Tube |
| Material | Silicon |
| Operating Temperature | -55℃ ~ 150℃ (TJ) |
The IXTH24N50 is a MegaMOS™ single N-channel standard Power MOSFET offers fast switching time and high power density. It is suitable for switch-mode and resonant-mode power supplies and DC choppers.
● International standard packages
● Low RDS (ON) HDMOS™ process
● Rugged polysilicon gate cell structure
● Low package inductance (<5nH) - Easy to drive and to protect
● Easy to mount with 1 screw (isolated mounting screw hole)
● Space saving
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