| TYPE | DESCRIPTION |
|---|
| Mounting Style | Through Hole |
| Number of Pins | 3 Pin |
| Case/Package | TO-247-3 |
| Number of Positions | 3 Position |
| Drain to Source Resistance (on) (Rds) | 0.024 Ω |
| Polarity | N-Channel |
| Power Dissipation | 600 W |
| Threshold Voltage | 5 V |
| Drain to Source Voltage (Vds) | 200 V |
| Continuous Drain Current (Ids) | 96.0 A |
| Rise Time | 30 ns |
| Input Capacitance (Ciss) | 4800pF @25V(Vds) |
| Fall Time | 30 ns |
| Operating Temperature (Max) | 175 ℃ |
| Operating Temperature (Min) | -55 ℃ |
| Power Dissipation (Max) | 600W (Tc) |
| TYPE | DESCRIPTION |
|---|
| Product Lifecycle Status | Active |
| Packaging | Tube |
| Operating Temperature | -55℃ ~ 175℃ (TJ) |
The IXTH96N20P is a PolarHT™ single N-channel enhancement-mode Power MOSFET offers reduced static drain-to-source ON-resistance and high power density.
● International standard packages
● Unclamped inductive switching (UIS) rating
● Low package inductance - Easy to drive and to protect
● Easy to mount
● Space saving
● Avalanche rating
IXYS Semiconductor
5 Pages / 0.19 MByte
IXYS Semiconductor
1 Pages / 0.37 MByte
IXYS Semiconductor
Trans MOSFET N-CH 200V 96A 3Pin(3+Tab) TO-247
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