| TYPE | DESCRIPTION |
|---|
| Mounting Style | Surface Mount |
| Number of Pins | 3 Pin |
| Voltage Rating (DC) | 600 V |
| Current Rating | 4.00 A |
| Case/Package | TO-263-3 |
| Number of Positions | 3 Position |
| Drain to Source Resistance (on) (Rds) | 1.76 Ω |
| Polarity | N-Channel |
| Power Dissipation | 70 W |
| Threshold Voltage | 3.75 V |
| Drain to Source Voltage (Vds) | 600 V |
| Breakdown Voltage (Drain to Source) | 600 V |
| Breakdown Voltage (Gate to Source) | ±30.0 V |
| Continuous Drain Current (Ids) | 2.00 A |
| Rise Time | 9.5 ns |
| Input Capacitance (Ciss) | 510pF @25V(Vds) |
| Input Power (Max) | 70 W |
| Fall Time | 16.5 ns |
| Operating Temperature (Max) | 150 ℃ |
| Operating Temperature (Min) | -55 ℃ |
| Power Dissipation (Max) | 70000 mW |
| TYPE | DESCRIPTION |
|---|
| Product Lifecycle Status | Active |
| Packaging | Tape & Reel (TR) |
| Size-Length | 10.4 mm |
| Size-Width | 9.35 mm |
| Size-Height | 4.6 mm |
| Operating Temperature | 150℃ (TJ) |
The STB4NK60ZT4 is a 600V N-channel Zener-protected Power MOSFET developed using SuperMESH™ technology, achieved through optimization of well established strip-based PowerMESH™ layout. In addition to a significant reduction in on resistance, the MOSFET is designed to ensure a high level of dv/dt capability for the most demanding applications.
● 100% Avalanche tested
● Very low intrinsic capacitance
● Zener-protected
ST Microelectronics
16 Pages / 0.74 MByte
ST Microelectronics
32 Pages / 0.7 MByte
ST Microelectronics
1 Pages / 0.13 MByte
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