| TYPE | DESCRIPTION |
|---|
| Number of Pins | 4 Pin |
| Case/Package | SOT-227-4 |
| Polarity | N-CH |
| Power Dissipation | 700 W |
| Drain to Source Voltage (Vds) | 1000 V |
| Continuous Drain Current (Ids) | 22A |
| Rise Time | 35 ns |
| Input Capacitance (Ciss) | 7050pF @25V(Vds) |
| Fall Time | 50 ns |
| Operating Temperature (Max) | 150 ℃ |
| Operating Temperature (Min) | -55 ℃ |
| Power Dissipation (Max) | 700000 mW |
| TYPE | DESCRIPTION |
|---|
| Product Lifecycle Status | Active |
| Packaging | Tube |
| Size-Length | 38.2 mm |
| Size-Width | 25.07 mm |
| Size-Height | 9.6 mm |
| Operating Temperature | -55℃ ~ 150℃ (TJ) |
This IXTN22N100L power MOSFET from Ixys Corporation can not only be used for amplifying electronic signals but also for switching between electronic signals. Its maximum power dissipation is 700000 mW. This N channel MOSFET transistor operates in enhancement mode. This MOSFET transistor has a minimum operating temperature of -55 °C and a maximum of 150 °C.
IXYS Semiconductor
5 Pages / 0.15 MByte
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