| TYPE | DESCRIPTION |
|---|
| Mounting Style | Through Hole |
| Number of Pins | 3 Pin |
| Case/Package | TO-220-3 |
| Number of Channels | 1 Channel |
| Number of Positions | 3 Position |
| Drain to Source Resistance (on) (Rds) | 0.48 Ω |
| Polarity | N-Channel |
| Power Dissipation | 39 W |
| Threshold Voltage | 3.9 V |
| Drain to Source Voltage (Vds) | 500 V |
| Continuous Drain Current (Ids) | 12A |
| Rise Time | 32 ns |
| Input Capacitance (Ciss) | 1645pF @25V(Vds) |
| Input Power (Max) | 39 W |
| Fall Time | 23 ns |
| Operating Temperature (Max) | 150 ℃ |
| Operating Temperature (Min) | -55 ℃ |
| Power Dissipation (Max) | 39W (Tc) |
| TYPE | DESCRIPTION |
|---|
| Product Lifecycle Status | Active |
| Packaging | Tube |
| Operating Temperature | -55℃ ~ 150℃ (TJ) |
The NDF11N50ZG is a N-channel Power MOSFET offers 500V drain source voltage and 7.4A continuous drain current.
● Low ON-resistance
● Low gate charge
● ESD diode-protected gate
● 100% Avalanche tested
● Halogen-free
● -55 to 150°C Operating junction temperature range
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