| TYPE | DESCRIPTION |
|---|
| Mounting Style | Through Hole |
| Number of Pins | 3 Pin |
| Case/Package | TO-220-3 |
| Drain to Source Resistance (on) (Rds) | 18.0 mΩ |
| Polarity | N-Channel |
| Power Dissipation | 176 W |
| Drain to Source Voltage (Vds) | 100 V |
| Breakdown Voltage (Drain to Source) | 100 V |
| Continuous Drain Current (Ids) | 60.0 A |
| Rise Time | 40 ns |
| Input Capacitance (Ciss) | 2650pF @25V(Vds) |
| Input Power (Max) | 176 W |
| Fall Time | 37 ns |
| Operating Temperature (Max) | 175 ℃ |
| Operating Temperature (Min) | -55 ℃ |
| Power Dissipation (Max) | 176W (Tc) |
| TYPE | DESCRIPTION |
|---|
| Product Lifecycle Status | Active |
| Packaging | Tube |
| Size-Length | 10.66 mm |
| Size-Width | 4.82 mm |
| Size-Height | 9.15 mm |
| Operating Temperature | -55℃ ~ 175℃ (TJ) |
Amplify electronic signals and switch between them with the help of Ixys Corporation"s IXTP60N10T power MOSFET. Its maximum power dissipation is 176000 mW. This N channel MOSFET transistor operates in enhancement mode. This MOSFET transistor has a minimum operating temperature of -55 °C and a maximum of 175 °C.
IXYS Semiconductor
5 Pages / 0.16 MByte
IXYS Semiconductor
Trans MOSFET N-CH 100V 60A 3Pin(3+Tab) TO-220AB
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