TYPE | DESCRIPTION |
---|
Mounting Style | Surface Mount |
Number of Pins | 4 Pin |
Case/Package | TO-261-4 |
Power Rating | 1.6 W |
Number of Positions | 3 Position |
Polarity | NPN |
Power Dissipation | 1.6 W |
Breakdown Voltage (Collector to Emitter) | 400 V |
Continuous Collector Current | 1.5A |
hFE Min | 16 @350mA, 5V |
Input Power (Max) | 1.6 W |
DC Current Gain (hFE) | 25 |
Operating Temperature (Max) | 150 ℃ |
Operating Temperature (Min) | -65 ℃ |
Power Dissipation (Max) | 1600 mW |
TYPE | DESCRIPTION |
---|
Product Lifecycle Status | Active |
Packaging | Tape & Reel (TR) |
Size-Length | 6.5 mm |
Size-Width | 3.5 mm |
Size-Height | 1.8 mm |
Operating Temperature | 150℃ (TJ) |
The STN83003 is a NPN fast-switching Power Transistor manufactured using Multi Epitaxial Planar technology for high switching speeds and high voltage capability. It uses a cellular emitter structure with planar edge termination to enhance switching speeds while maintaining the wide RBSOA. It is expressly designed for a new solution to be used in compact fluorescent lamps, where it is coupled with the STN93003, its complementary PNP transistor.
● High voltage capability
● Very high switching speed
ST Microelectronics
11 Pages / 0.26 MByte
ST Microelectronics
7 Pages / 0.07 MByte
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