| TYPE | DESCRIPTION |
|---|
| Mounting Style | Through Hole |
| Number of Pins | 3 Pin |
| Case/Package | TO-220-3 |
| Number of Channels | 1 Channel |
| Drain to Source Resistance (on) (Rds) | 14 mΩ |
| Power Dissipation | 230 W |
| Drain to Source Voltage (Vds) | 100 V |
| Breakdown Voltage (Drain to Source) | 100 V |
| Rise Time | 54 ns |
| Input Capacitance (Ciss) | 3040pF @25V(Vds) |
| Input Power (Max) | 230 W |
| Fall Time | 48 ns |
| Operating Temperature (Max) | 175 ℃ |
| Operating Temperature (Min) | -55 ℃ |
| Power Dissipation (Max) | 230W (Tc) |
| TYPE | DESCRIPTION |
|---|
| Product Lifecycle Status | Active |
| Packaging | Tube |
| Size-Length | 10.66 mm |
| Size-Width | 4.83 mm |
| Size-Height | 9.15 mm |
| Operating Temperature | -55℃ ~ 175℃ (TJ) |
Thanks to Ixys Corporation, both your amplification and switching needs can be taken care of with one component: the IXTP80N10T power MOSFET. Its maximum power dissipation is 230000 mW. This N channel MOSFET transistor operates in enhancement mode. This MOSFET transistor has a minimum operating temperature of -55 °C and a maximum of 175 °C.
IXYS Semiconductor
5 Pages / 0.18 MByte
IXYS Semiconductor
Trans MOSFET N-CH 100V 80A 3Pin(3+Tab) TO-220
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