| TYPE | DESCRIPTION |
|---|
| Mounting Style | Through Hole |
| Number of Pins | 3 Pin |
| Case/Package | TO-220-3 |
| Power Dissipation | 56000 mW |
| Input Capacitance | 208 pF |
| Breakdown Voltage (Collector to Emitter) | 600 V |
| Thermal Resistance | 62.5 ℃/W |
| Reverse recovery time | 23 ns |
| Input Power (Max) | 56 W |
| Operating Temperature (Max) | 150 ℃ |
| Operating Temperature (Min) | -55 ℃ |
| Power Dissipation (Max) | 56000 mW |
| TYPE | DESCRIPTION |
|---|
| Product Lifecycle Status | Active |
| Packaging | Tube |
| Operating Temperature | -55℃ ~ 150℃ (TJ) |
This powerful and secure STGPL6NC60DI IGBT transistor from STMicroelectronics will make sure your circuit works properly. It has a maximum collector emitter voltage of 600 V. Its maximum power dissipation is 56000 mW. In order to ensure parts aren"t damaged by bulk packaging, this product comes in tube packaging to add a little more protection by storing the loose parts in an outer tube. It is made in a single configuration. This IGBT transistor has an operating temperature range of -55 °C to 150 °C.
ST Microelectronics
18 Pages / 0.62 MByte
ST Microelectronics
Trans IGBT Chip N-CH 600V 14A 56000mW 3Pin(3+Tab) TO-220 Tube
ST Microelectronics
Trans IGBT Chip N-CH 600V 14A 56000mW 3Pin(3+Tab) TO-220 Tube
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