IXTQ52N30P Datasheet PDF - IXYS Semiconductor

Manufacturer:	IXYS Semiconductor
Category:	MOSFETs
Case Package:	TO-3-3
Description:	TO-3P N-CH 300V 52A
Documentation:	IXTQ52N30P Datasheet (6 Pages)Package Outline Dimension on2 Page 4 Page
Pictures:	3D Model Symbol Footprint Pinout Product Pictures

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IXTQ52N30P Specifications

TYPE	DESCRIPTION
Mounting Style	Through Hole
Number of Pins	3 Pin
Case/Package	TO-3-3
Number of Channels	1 Channel
Drain to Source Resistance (on) (Rds)	66 mΩ
Polarity	N-CH
Power Dissipation	400 W
Drain to Source Voltage (Vds)	300 V
Breakdown Voltage (Drain to Source)	300 V
Continuous Drain Current (Ids)	52A
Rise Time	22 ns
Input Capacitance (Ciss)	3490pF @25V(Vds)
Input Power (Max)	400 W
Fall Time	20 ns
Operating Temperature (Max)	150 ℃
Operating Temperature (Min)	-55 ℃
Power Dissipation (Max)	400W (Tc)