TYPE | DESCRIPTION |
---|
Mounting Style | Through Hole |
Number of Pins | 3 Pin |
Case/Package | TO-220-3 |
Number of Positions | 3 Position |
Polarity | N-Channel |
Power Dissipation | 25 W |
Rise Time | 6.00 ns |
Breakdown Voltage (Collector to Emitter) | 600 V |
Reverse recovery time | 22 ns |
Input Power (Max) | 24 W |
Operating Temperature (Max) | 150 ℃ |
Operating Temperature (Min) | -55 ℃ |
Power Dissipation (Max) | 24 W |
TYPE | DESCRIPTION |
---|
Product Lifecycle Status | Active |
Packaging | Tube |
Size-Length | 10.4 mm |
Size-Width | 4.6 mm |
Size-Height | 16.4 mm |
Operating Temperature | -55℃ ~ 150℃ (TJ) |
The STGF10NC60HD is a Very Fast IGBT utilizes the advanced PowerMESH™ process resulting in an excellent trade-off between switching performance and low ON-state behaviour. It is suitable for SMPS and PFC in both hard switch and resonant topologies.
● Low on-voltage drop (VCE(sat))
● Low CRES/CIES ratio (no cross-conduction susceptibility)
● Very soft ultrafast recovery anti-parallel diode
ST Microelectronics
19 Pages / 0.74 MByte
ST Microelectronics
20 Pages / 2.6 MByte
ST Microelectronics
Trans IGBT Chip N-CH 600V 9A 25000mW 3Pin(3+Tab) TO-220FP Tube
ST Microelectronics
Trans IGBT Chip N-CH 600V 9A 24000mW 3Pin(3+Tab) TO-220FP Tube
ST Microelectronics
Trans IGBT Chip N-CH 600V 10A 25000mW 3Pin(3+Tab) TO-220FP Tube
ST Microelectronics
N-channel 600V - 10A - D2PAK / TO-220 / TO-220FP Short circuit rated PowerMESH TM IGBT
Part Datasheet PDF Search
72,405,303 Parts Datasheet PDF, Update more than 5,000 PDF files ervery day.