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IXTT110N10L2
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IXTT110N10L2 Datasheet PDF - IXYS Semiconductor

Manufacturer:IXYS Semiconductor
Category:MOSFETs
Case Package:TO-268-3
Description:TO-268 N-CH 100V 110A
Documentation:IXTT110N10L2 Datasheet (5 Pages)
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IXTT110N10L2 Datasheet PDF (5 Pages)
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IXTT110N10L2 Specifications

TYPEDESCRIPTION
Mounting StyleSurface Mount
Number of Pins3 Pin
Case/PackageTO-268-3
PolarityN-CH
Power Dissipation600 W
Input Capacitance10.5 nF
Drain to Source Voltage (Vds)100 V
Continuous Drain Current (Ids)110A
Rise Time130 ns
Input Capacitance (Ciss)10500pF @25V(Vds)
Input Power (Max)600 W
Fall Time24 ns
Operating Temperature (Max)150 ℃
Operating Temperature (Min)-55 ℃
Power Dissipation (Max)600W (Tc)
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IXTT110N10L2 Size & Package

TYPEDESCRIPTION
Product Lifecycle StatusActive
PackagingTube
Operating Temperature-55℃ ~ 150℃ (TJ)
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IXTT110N10L2 Documents

IXTT110N10L2 Datasheet
IXYS Semiconductor
5 Pages / 0.13 MByte
IXTT110N10L2 Other Datasheet PDF
IXYS Semiconductor
5 Pages / 0.13 MByte

IXTT110N10 Documents

IXTT110N10P Datasheet PDF
IXYS Semiconductor
TO-268 N-CH 100V 110A
IXTT110N10L2 Datasheet PDF
IXYS Semiconductor
TO-268 N-CH 100V 110A
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