| TYPE | DESCRIPTION |
|---|
| Mounting Style | Through Hole |
| Number of Pins | 3 Pin |
| Case/Package | TO-247-3 |
| Power Dissipation | 270000 mW |
| Breakdown Voltage (Collector to Emitter) | 600 V |
| Reverse recovery time | 25 ns |
| Input Power (Max) | 270 W |
| Operating Temperature (Max) | 175 ℃ |
| Operating Temperature (Min) | -55 ℃ |
| Power Dissipation (Max) | 270000 mW |
| TYPE | DESCRIPTION |
|---|
| Product Lifecycle Status | Active |
| Packaging | Tube |
| Operating Temperature | -55℃ ~ 175℃ (TJ) |
The IXXH30N60B3D1 IGBT transistor from Ixys Corporation will work effectively even with higher currents. Its maximum power dissipation is 270000 mW. It has a maximum collector emitter voltage of 600 V. This device utilizes xpt technology. It is made in a single configuration. This IGBT transistor has an operating temperature range of -55 °C to 175 °C.
IXYS Semiconductor
7 Pages / 0.23 MByte
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