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IXXK200N65B4
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IXXK200N65B4 Datasheet PDF - IXYS Semiconductor

Manufacturer:IXYS Semiconductor
Category:IGBTs
Case Package:TO-264-3
Description:Igbt 650V 370A 1150W To264
Documentation:IXXK200N65B4 Datasheet (7 Pages)
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IXXK200N65B4 Datasheet PDF (7 Pages)
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IXXK200N65B4 Specifications

TYPEDESCRIPTION
Mounting StyleThrough Hole
Number of Pins3 Pin
Case/PackageTO-264-3
Power Dissipation1150 W
Breakdown Voltage (Collector to Emitter)650 V
Input Power (Max)1150 W
Operating Temperature (Max)175 ℃
Operating Temperature (Min)55 ℃
Power Dissipation (Max)1150000 mW
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IXXK200N65B4 Size & Package

TYPEDESCRIPTION
Product Lifecycle StatusActive
PackagingTube
Operating Temperature-55℃ ~ 175℃ (TJ)
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IXXK200N65B4 Documents

IXXK200N65B4 Datasheet
IXYS Semiconductor
7 Pages / 0.23 MByte
IXXK200N65B4 Other Datasheet PDF
IXYS Semiconductor
6 Pages / 0.22 MByte

IXXK200N65 Documents

IXXK200N65B4 Datasheet PDF
IXYS Semiconductor
Igbt 650V 370A 1150W To264
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