| TYPE | DESCRIPTION |
|---|
| Mounting Style | Through Hole |
| Number of Pins | 3 Pin |
| Case/Package | TO-247-3 |
| Power Dissipation | 880 W |
| Breakdown Voltage (Collector to Emitter) | 650 V |
| Reverse recovery time | 100 ns |
| Input Power (Max) | 880 W |
| Operating Temperature (Max) | 175 ℃ |
| Operating Temperature (Min) | -55 ℃ |
| Power Dissipation (Max) | 880000 mW |
| TYPE | DESCRIPTION |
|---|
| Product Lifecycle Status | Active |
| Packaging | Tube |
| Operating Temperature | -55℃ ~ 175℃ (TJ) |
This IXXX110N65B4H1 IGBT transistor from Ixys Corporation is an electronic switch that can handle large currents with very little gate current drive. It has a maximum collector emitter voltage of 650 V. Its maximum power dissipation is 880000 mW. This device is made with xpt technology. This IGBT transistor has a minimum operating temperature of -55 °C and a maximum of 175 °C. It is made in a single configuration.
IXYS Semiconductor
8 Pages / 0.25 MByte
IXYS Semiconductor
7 Pages / 0.24 MByte
IXYS Semiconductor
Trans IGBT Chip N-CH 650V 250A 880000mW 3Pin(3+Tab) PLUS 247
Littelfuse
Insulated Gate Bipolar Transistor,
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