| TYPE | DESCRIPTION |
|---|
| Mounting Style | Through Hole |
| Number of Pins | 3 Pin |
| Voltage Rating (DC) | -500 V |
| Current Rating | -2.00 A |
| Case/Package | TO-220-3 |
| Number of Channels | 1 Channel |
| Number of Positions | 3 Position |
| Drain to Source Resistance (on) (Rds) | 6 Ω |
| Polarity | P-Channel |
| Power Dissipation | 75 W |
| Input Capacitance | 1.18 nF |
| Gate Charge | 27.0 nC |
| Drain to Source Voltage (Vds) | 500 V |
| Breakdown Voltage (Drain to Source) | 500 V |
| Breakdown Voltage (Gate to Source) | ±20.0 V |
| Continuous Drain Current (Ids) | 2.00 A |
| Rise Time | 14 ns |
| Input Capacitance (Ciss) | 1183pF @25V(Vds) |
| Input Power (Max) | 75 W |
| Fall Time | 19 ns |
| Operating Temperature (Max) | 150 ℃ |
| Operating Temperature (Min) | 55 ℃ |
| Power Dissipation (Max) | 75W (Tc) |
| TYPE | DESCRIPTION |
|---|
| Product Lifecycle Status | Active |
| Packaging | Tube |
| Size-Length | 10.53 mm |
| Size-Width | 4.83 mm |
| Size-Height | 15.75 mm |
| Operating Temperature | -55℃ ~ 150℃ (TJ) |
The MTP2P50EG is a P-channel high voltage Power MOSFET uses an advanced termination scheme to provide enhanced voltage-blocking capability without degrading performance over time. It is designed to withstand high energy in the avalanche and commutation modes. The energy efficient design also offers a drain-to-source diode with a fast recovery time. Designed for high voltage, high speed switching applications in power supplies, converters and PWM motor controls, these devices are particularly well suited for bridge circuits where diode speed and commutating safe operating areas are critical and offer additional safety margin against unexpected voltage transients.
● Robust high voltage termination
● Avalanche energy specified
● Source-to-drain diode recovery time comparable to a discrete
● Fast recovery diode
● Diode is characterized for use in bridge circuits
● IDSS and VDS (on) specified at elevated temperature
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Motorola
TMOS POWER FET 2.0 AMPERES 500 VOLTS RDS(on) = 6Ω
Motorola
TMOS POWER FET 2.0 AMPERES 500 VOLTS RDS(on) = 6Ω
Freescale
TRANSISTOR,MOSFET,P-CHANNEL,500V V(BR)DSS,2A I(D),TO-220AB
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