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IXXX200N65B4
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IXXX200N65B4 Datasheet PDF - IXYS Semiconductor

Manufacturer:IXYS Semiconductor
Category:IGBTs
Case Package:TO-247-3
Description:IGBT Transistors 650V/370A Trench IGBT GenX4 XPT
Documentation:IXXX200N65B4 Datasheet (7 Pages)
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IXXX200N65B4 Datasheet PDF (7 Pages)
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IXXX200N65B4 Specifications

TYPEDESCRIPTION
Mounting StyleThrough Hole
Number of Pins3 Pin
Case/PackageTO-247-3
Power Dissipation1150 W
Breakdown Voltage (Collector to Emitter)650 V
Input Power (Max)1150 W
Operating Temperature (Max)175 ℃
Operating Temperature (Min)55 ℃
Power Dissipation (Max)1150000 mW
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IXXX200N65B4 Size & Package

TYPEDESCRIPTION
Product Lifecycle StatusActive
PackagingTube
Operating Temperature-55℃ ~ 175℃ (TJ)
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IXXX200N65B4 Documents

IXXX200N65B4 Datasheet
IXYS Semiconductor
7 Pages / 0.23 MByte
IXXX200N65B4 Other Datasheet PDF
IXYS Semiconductor
6 Pages / 0.22 MByte

IXXX200N65 Documents

IXXX200N65B4 Datasheet PDF
IXYS Semiconductor
IGBT Transistors 650V/370A Trench IGBT GenX4 XPT
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