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IXGQ85N33PCD1
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IXGQ85N33PCD1 Datasheet PDF - IXYS Semiconductor

Manufacturer:IXYS Semiconductor
Category:IGBTs
Case Package:TO-3-3
Description:Trans IGBT Chip N-CH 330V 85A 150000mW 3Pin(3+Tab) TO-3P
Documentation:IXGQ85N33PCD1 Datasheet (5 Pages)
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IXGQ85N33PCD1 Datasheet PDF (5 Pages)
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IXGQ85N33PCD1 Specifications

TYPEDESCRIPTION
Mounting StyleThrough Hole
Number of Pins3 Pin
Case/PackageTO-3-3
Power Dissipation150000 mW
Breakdown Voltage (Collector to Emitter)330 V
Reverse recovery time250 ns
Input Power (Max)150 W
Operating Temperature (Max)150 ℃
Operating Temperature (Min)-55 ℃
Power Dissipation (Max)150000 mW
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IXGQ85N33PCD1 Size & Package

TYPEDESCRIPTION
Product Lifecycle StatusActive
PackagingTube
Operating Temperature-55℃ ~ 150℃ (TJ)
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IXGQ85N33PCD1 Documents

IXGQ85N33PCD1 Datasheet
IXYS Semiconductor
5 Pages / 0.14 MByte

IXGQ85N33 Documents

IXGQ85N33PCD1 Datasheet PDF
IXYS Semiconductor
Trans IGBT Chip N-CH 330V 85A 150000mW 3Pin(3+Tab) TO-3P
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