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IXYB82N120C3H1
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IXYB82N120C3H1 Datasheet PDF - IXYS Semiconductor

Manufacturer:IXYS Semiconductor
Category:IGBTs
Case Package:TO-264-3
Description:IXYS SEMICONDUCTOR IXYB82N120C3H1 IGBT Single Transistor, 164A, 2.75V, 1.04kW, 1.2kV, TO-264AA, 3Pins New
Documentation:IXYB82N120C3H1 Datasheet (7 Pages)
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IXYB82N120C3H1 Datasheet PDF (7 Pages)
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IXYB82N120C3H1 Specifications

TYPEDESCRIPTION
Mounting StyleThrough Hole
Number of Pins3 Pin
Case/PackageTO-264-3
Number of Positions3 Position
Power Dissipation1.04 kW
Breakdown Voltage (Collector to Emitter)1200 V
Reverse recovery time420 ns
Input Power (Max)1040 W
Operating Temperature (Max)150 ℃
Operating Temperature (Min)-55 ℃
Power Dissipation (Max)1.04 kW
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IXYB82N120C3H1 Size & Package

TYPEDESCRIPTION
Product Lifecycle StatusActive
PackagingTube
Size-Length20.29 mm
Size-Width5.31 mm
Size-Height26.59 mm
Operating Temperature-55℃ ~ 150℃ (TJ)
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IXYB82N120C3H1 Documents

IXYB82N120C3H1 Datasheet
IXYS Semiconductor
7 Pages / 0.21 MByte

IXYB82N120C3 Documents

IXYB82N120C3H1 Datasheet PDF
IXYS Semiconductor
IXYS SEMICONDUCTOR IXYB82N120C3H1 IGBT Single Transistor, 164A, 2.75V, 1.04kW, 1.2kV, TO-264AA, 3Pins New
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