TYPE | DESCRIPTION |
---|
Mounting Style | Through Hole |
Number of Pins | 3 Pin |
Voltage Rating (DC) | 25.0 V |
Current Rating | 10.0 mA |
Case/Package | TO-226-3 |
Drain to Source Resistance (on) (Rds) | 18 Ω |
Polarity | N-Channel |
Breakdown Voltage (Gate to Source) | 25.0 V |
Reverse Breakdown Voltage | 25 V |
Input Power (Max) | 310 mW |
TYPE | DESCRIPTION |
---|
Product Lifecycle Status | Unknown |
Packaging | Bulk |
Operating Temperature | 135℃ (TJ) |
N−Channel Junction Field Effect Transistors, depletion mode (Type A) designed for general purpose audio amplifiers, analog switches and choppers.
●Features
●•N−Channel for Higher Gain
●•Drain and Source Interchangeable
●•High AC Input Impedance
●•High DC Input Resistance
●•Low RDS(on)< 18
●•Fast Switching td(on)+ tr= 8.0 ns (Typ)
●•Low Noise en= 6.0 nV/√Hz@ 10 Hz (Typ)
●•Pb−Free Packages are Available
ON Semiconductor
4 Pages / 0.05 MByte
Vishay Semiconductor
Trans JFET N-CH 3Pin TO-92
AVX
Trans Voltage Suppressor Diode, 600W, 110V V(RWM), Unidirectional, 1 Element, Silicon, DO-214AA, HALOGEN FREE, SMBJ, 2 PIN
Elpida
DDR DRAM, 128MX8, 0.255ns, CMOS, PBGA78, HALOGEN FREE AND ROHS COMPLIANT, FBGA-78
Golledge
Parallel - 5Th Overtone Quartz Crystal, 60MHz Min, 150MHz Max
Sensitron Semiconductor
Trans Voltage Suppressor Diode, 600W, 110V V(RWM), Unidirectional, 1 Element, Silicon, DO-214AA, PLASTIC, SMB, 2 PIN
Part Datasheet PDF Search
72,405,303 Parts Datasheet PDF, Update more than 5,000 PDF files ervery day.