TYPE | DESCRIPTION |
---|
Mounting Style | Through Hole |
Number of Pins | 3 Pin |
Case/Package | TO-39 |
Power Dissipation | 0.8 W |
Breakdown Voltage (Collector to Emitter) | 80 V |
hFE Min | 50 @500mA, 10V |
Input Power (Max) | 800 mW |
Operating Temperature (Max) | 200 ℃ |
Operating Temperature (Min) | -65 ℃ |
Power Dissipation (Max) | 800 mW |
TYPE | DESCRIPTION |
---|
Product Lifecycle Status | Active |
Packaging | Bag |
Material | Silicon |
Operating Temperature | -65℃ ~ 200℃ (TJ) |
This 2N3019S NPN leaded silicon transistor device is military qualified for high-reliability applications. Microsemi also offers numerous other transistor products to meet higher and lower power ratings with various switching speed requirements in both through-hole and surface-mount packages.
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