TYPE | DESCRIPTION |
---|
Mounting Style | Through Hole |
Number of Pins | 3 Pin |
Case/Package | TO-5 |
Power Dissipation | 1 W |
Breakdown Voltage (Collector to Emitter) | 60 V |
hFE Min | 30 @1.5A, 2V |
Input Power (Max) | 1 W |
Operating Temperature (Max) | 200 ℃ |
Operating Temperature (Min) | -55 ℃ |
Power Dissipation (Max) | 1000 mW |
TYPE | DESCRIPTION |
---|
Product Lifecycle Status | Obsolete |
Packaging | Bag |
Material | Silicon |
Operating Temperature | -65℃ ~ 200℃ (TJ) |
Design various electronic circuits with this versatile PNP JAN2N3868 GP BJT from Microsemi. This bipolar junction transistor"s maximum emitter base voltage is 4 V. Its maximum power dissipation is 1000 mW. This bipolar junction transistor has a minimum operating temperature of -65 °C and a maximum of 200 °C. It has a maximum collector emitter voltage of 60 V and a maximum emitter base voltage of 4 V.
Microsemi
4 Pages / 0.11 MByte
Microsemi
Trans GP BJT NPN 50V 0.8A 3Pin TO-39
Microsemi
JAN Series 50V 800mA Through Hole NPN Silicon Switching Transistor - TO-18
Microsemi
JAN Series 60V 600mA 0.5W(1/2W) PNP Small Signal Silicon Transistor - TO-18
Microsemi
JAN Series 80V 1A 800mW Through Hole Low Power NPN Silicon Transistor - TO-5
Microsemi
JAN Series 60V 600mA PNP Through Hole Switching Silicon Transistor - TO-39
Microsemi
JAN Series 80V 1A 0.5W(1/2W) Through Hole Low Power NPN Silicon Transistor - TO-18
Microsemi
Trans GP BJT NPN 350V 1A 3Pin TO-39
Microsemi
Trans GP BJT NPN 80V 1A 3Pin TO-39
Microsemi
Trans GP BJT PNP 60V 3A 3Pin TO-5
Microsemi
Trans GP BJT NPN 80V 0.5A 3Pin TO-5
Part Datasheet PDF Search
72,405,303 Parts Datasheet PDF, Update more than 5,000 PDF files ervery day.