| TYPE | DESCRIPTION |
|---|
| Number of Pins | 4 Pin |
| Case/Package | CSOT-23 |
| Power Dissipation | 0.5 W |
| Operating Temperature (Max) | 200 ℃ |
| Operating Temperature (Min) | -65 ℃ |
| Power Dissipation (Max) | 500 mW |
| TYPE | DESCRIPTION |
|---|
| Product Lifecycle Status | Unknown |
| Material | Silicon |
The three terminals of this PNP JANS2N2907AUB GP BJT from Semicoa Semiconductors give it the ability to be used as either an electronic switch or amplifier. This bipolar junction transistor"s maximum emitter base voltage is 5 V. Its maximum power dissipation is 500 mW. This bipolar junction transistor has a minimum operating temperature of -65 °C and a maximum of 200 °C. It has a maximum collector emitter voltage of 60 V and a maximum emitter base voltage of 5 V.
Semicoa Semiconductor
22 Pages / 0.55 MByte
Semicoa Semiconductor
2 Pages / 0.72 MByte
Microsemi
Trans GP BJT PNP 60V 0.6A 3Pin TO-18
Microsemi
Trans GP BJT PNP 60V 0.6A 3Pin UB
Microsemi
Trans GP BJT PNP 60V 0.6A 4Pin UA
Semicoa Semiconductor
Trans GP BJT PNP 60V 0.6A 3Pin CSOT-23
Semicoa Semiconductor
Trans GP BJT PNP 60V 0.6A 4Pin UA
Semicoa Semiconductor
Trans GP BJT PNP 60V 0.6A 3Pin TO-18
Microsemi
Trans GP BJT PNP 60V 0.6A 3Pin UB
Microsemi
Trans GP BJT PNP 60V 0.6A 3Pin TO-18
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