TYPE | DESCRIPTION |
---|
Mounting Style | Through Hole |
Number of Pins | 6 Pin |
Case/Package | TO-206 |
Power Dissipation | 0.35 W |
Breakdown Voltage (Collector to Emitter) | 60 V |
hFE Min | 300 @1mA, 5V |
Input Power (Max) | 350 mW |
Operating Temperature (Max) | 200 ℃ |
Operating Temperature (Min) | -65 ℃ |
Power Dissipation (Max) | 350 mW |
TYPE | DESCRIPTION |
---|
Product Lifecycle Status | Active |
Packaging | Bulk |
Material | Silicon |
Operating Temperature | 200℃ (TJ) |
Design filters, receivers, transmitters, op-amps, power supplies, and control circuits with this versatile NPN JANS2N2920 GP BJT from Microsemi. This bipolar junction transistor"s maximum emitter base voltage is 6 V. Its maximum power dissipation is 350 mW. This bipolar junction transistor has an operating temperature range of -65 °C to 200 °C. It has a maximum collector emitter voltage of 60 V and a maximum emitter base voltage of 6 V.
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