TYPE | DESCRIPTION |
---|
Mounting Style | Through Hole |
Number of Pins | 3 Pin |
Case/Package | TO-39 |
Polarity | NPN |
Power Dissipation | 1 W |
Breakdown Voltage (Collector to Emitter) | 150 V |
Continuous Collector Current | 0.3A |
hFE Min | 100 @150mA, 10V |
Input Power (Max) | 1 W |
Operating Temperature (Max) | 200 ℃ |
Operating Temperature (Min) | -65 ℃ |
Power Dissipation (Max) | 1000 mW |
TYPE | DESCRIPTION |
---|
Product Lifecycle Status | Active |
Packaging | Tray |
Material | Silicon |
Operating Temperature | -65℃ ~ 200℃ (TJ) |
This family of 2N3498 thru 2N3501 epitaxial planar transistors are military qualified up to a JANS level for high-reliability applications. These devices are also available in TO-5 and low profile U4 packaging. Microsemi also offers numerous other transistor products to meet higher and lower power ratings with various switching speed requirements in both through-hole and surface-mount packages.
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