| TYPE | DESCRIPTION |
|---|
| Mounting Style | Through Hole |
| Number of Pins | 4 Pin |
| Case/Package | TO-206 |
| Polarity | NPN |
| Power Dissipation | 0.36 W |
| Breakdown Voltage (Collector to Emitter) | 15 V |
| hFE Min | 20 @100mA, 1V |
| Input Power (Max) | 400 mW |
| Operating Temperature (Max) | 200 ℃ |
| Operating Temperature (Min) | -65 ℃ |
| Power Dissipation (Max) | 360 mW |
| TYPE | DESCRIPTION |
|---|
| Product Lifecycle Status | Active |
| Packaging | Pack |
| Material | Silicon |
| Operating Temperature | -65℃ ~ 200℃ (TJ) |
This specially engineered NPN JANTXV2N2369AUB GP BJT from Microsemi comes with a variety of characteristics including absolute maximum ratings, thermal characteristics, and DC and AC electrical characteristics. This bipolar junction transistor"s maximum emitter base voltage is 4.5 V. Its maximum power dissipation is 360 mW. It has a maximum collector emitter voltage of 15 V and a maximum emitter base voltage of 4.5 V. This bipolar junction transistor has a minimum operating temperature of -65 °C and a maximum of 200 °C.
Microsemi
8 Pages / 0.43 MByte
Microsemi
8 Pages / 0.42 MByte
Microsemi
JANTXV Series 15V 360mW Through Hole NPN Silicon Transistor - TO-206AA (TO-18)
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