Description
●The K3010P(G) series consists of a phototransistor optically coupled to a gallium arsenide infrared-emitting diode in a 6-lead plastic dual inline package. The elements are mounted on one leadframe using a coplanar technique, providing a fixed distance between input and output for highest safety requirements.
●Features
●Approvals:
●• BSI: BS EN 41003, BS EN 60095 (BS 415), BS EN 60950 (BS 7002), Certificate number 7081 and 7402
●• FIMKO (SETI): EN 60950, Certificate number 12398
●• Underwriters Laboratory (UL) 1577 recognized, file number E-76222
●• VDE 0884, Certificate number 94778
●VDE 0884 related features:
●• Rated impulse voltage (transient overvoltage) VIOTM = 6 kV peak
●• Isolation test voltage (partial discharge test voltage) Vpd = 1.6 kV
●• Rated isolation voltage (RMS includes DC) VIOWM = 600 VRMS (848 V peak)
●• Rated recurring peak voltage (repetitive) VIORM = 600 VRMS
●• Creepage current resistance according to VDE 0303/IEC 112
● Comparative Tracking Index: CTI = 275
●• Thickness through insulation ≥ 0.75 mm
●General features:
●• Isolation materials according to UL 94-VO
●• Pollution degree 2 (DIN/VDE 0110 resp. IEC 664)
●• Climatic classification 55/100/21 (IEC 68 part 1)
●• Special construction:
● Therefore, extra low coupling capacity of typical 0.2 pF, high Common Mode Rejection
●• IFT offered in 3 groups
●• Coupling System C
●Applications
●Circuits for safe protective separation against electrical shock according to safety class II (reinforced isolation):
● • For appl. class I – IV at mains voltage ≤ 300 V
● • For appl. class I – III at mains voltage ≤ 600 V according to VDE 0884, table 2, suitable for:
●Monitors, air conditioners, line switches, solid state relays, microwaves.
