TYPE | DESCRIPTION |
---|
Mounting Style | Through Hole |
Number of Pins | 6 Pin |
Voltage Rating (DC) | 1.25 V |
Case/Package | DIP-6 |
Output Voltage | 400 V |
Number of Channels | 1 Channel |
Forward Voltage | 1.3 V |
Input Current | 50.0 mA |
Power Dissipation | 350 mW |
Isolation Voltage | 5300 Vrms |
Holding Current | 200 µA |
Forward Current | 80 mA |
Output Voltage (Max) | 280 VAC |
Maximum Forward Voltage (Max) | 1.6 V |
Forward Current (Max) | 80 mA |
Operating Temperature (Max) | 85 ℃ |
Operating Temperature (Min) | -40 ℃ |
Power Dissipation (Max) | 350 mW |
TYPE | DESCRIPTION |
---|
Product Lifecycle Status | Active |
Packaging | Tube |
Size-Length | 8.8 mm |
Size-Width | 6.4 mm |
Size-Height | 4.2 mm |
Operating Temperature | -55℃ ~ 100℃ |
Description
●The K3020P(G) series consists of a phototransistor optically coupled to a gallium arsenide infrared-emitting diode in a 6-lead plastic dual inline package. The elements are mounted on one leadframe using a coplanar technique, providing a fixed distance be tween input and output for highest safety requirements.
●Applications
●Circuits for safe protective separation against electrical shock according to safety class II (reinforced isolation):
●For appl. class I – IV at mains voltage ≤300 V
●For appl. class I – III at mains voltage ≤600 V
●according to VDE 0884, table 2, suitable for:
Vishay Semiconductor
5 Pages / 0.11 MByte
Vishay Semiconductor
5 Pages / 0.11 MByte
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