| TYPE | DESCRIPTION |
|---|
| Mounting Style | Through Hole |
| Number of Pins | 3 Pin |
| Case/Package | TO-226-3 |
| Number of Positions | 3 Position |
| Power Dissipation | 900 mW |
| Breakdown Voltage (Collector to Emitter) | 160 V |
| hFE Min | 160 @200mA, 5V |
| Input Power (Max) | 900 mW |
| DC Current Gain (hFE) | 160 |
| Operating Temperature (Max) | 150 ℃ |
| Operating Temperature (Min) | -55 ℃ |
| Power Dissipation (Max) | 900 mW |
| TYPE | DESCRIPTION |
|---|
| Product Lifecycle Status | Active |
| Material | Silicon |
| Size-Length | 5.1 mm |
| Size-Width | 4.1 mm |
| Size-Height | 8.2 mm |
| Operating Temperature | 150℃ (TJ) |
Bipolar (BJT) Transistor PNP 160V 1A 50MHz 900mW Through Hole TO-92-3
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Trans GP BJT PNP 160V 1A 900mW 3Pin TO-92L Bag
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Trans GP BJT PNP 160V 1A 3Pin TO-92L Ammo
ON Semiconductor
Trans GP BJT PNP 160V 1A 3Pin TO-92L Bulk
Fairchild
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Bipolar Transistors - BJT PNP Epitaxial Transistor
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