TYPE | DESCRIPTION |
---|
Mounting Style | Surface Mount |
Number of Pins | 8 Pin |
Current Rating | 4.70 A |
Case/Package | SOIC-8 |
Number of Positions | 8 Position |
Drain to Source Resistance (on) (Rds) | 105 mΩ |
Polarity | N-Channel, P-Channel |
Power Dissipation | 2.1 W |
Threshold Voltage | 1 V |
Input Capacitance | 1.02 nF |
Gate Charge | 24.2 nC |
Drain to Source Voltage (Vds) | 60 V |
Breakdown Voltage (Drain to Source) | 60.0 V |
Breakdown Voltage (Gate to Source) | ±20.0 V |
Continuous Drain Current (Ids) | 4.70 A |
Rise Time | 4.1 ns |
Input Capacitance (Ciss) | 1063pF @30V(Vds) |
Input Power (Max) | 1.25 W |
Operating Temperature (Max) | 150 ℃ |
Operating Temperature (Min) | -55 ℃ |
Power Dissipation (Max) | 1.25 W |
TYPE | DESCRIPTION |
---|
Product Lifecycle Status | Active |
Packaging | Tape & Reel (TR) |
Size-Length | 5 mm |
Size-Width | 4 mm |
Size-Height | 1.5 mm |
Operating Temperature | -55℃ ~ 150℃ |
The ZXMC4559DN8TA is a N/P-channel complementary Pair enhancement-mode MOSFET been designed to minimize the ON-state resistance RDS (ON) and yet maintain superior switching performance. It is ideal for DC-to-DC converters and LCD backlighting applications.
● Low input capacitance
● Low ON-resistance
● Fast switching speed
● Halogen-free
● UL94V-0 Flammability rating
● Qualified to AEC-Q101 standards for high reliability
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