| TYPE | DESCRIPTION |
|---|
| Mounting Style | Through Hole |
| Frequency | 50 MHz |
| Number of Pins | 3 Pin |
| Case/Package | TO-226-3 |
| Power Dissipation | 0.8 W |
| Breakdown Voltage (Collector to Emitter) | 60 V |
| hFE Min | 120 @50mA, 2V |
| Input Power (Max) | 800 mW |
| Operating Temperature (Max) | 150 ℃ |
| Operating Temperature (Min) | -55 ℃ |
| Power Dissipation (Max) | 800 mW |
| TYPE | DESCRIPTION |
|---|
| Product Lifecycle Status | Active |
| Material | Silicon |
| Size-Length | 4.7 mm |
| Size-Width | 3.93 mm |
| Size-Height | 4.7 mm |
| Operating Temperature | 150℃ (TJ) |
Bipolar (BJT) Transistor NPN 60V 700mA 50MHz 800mW Through Hole TO-92-3
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