| TYPE | DESCRIPTION |
|---|
| Mounting Style | Surface Mount |
| Frequency | 160 MHz |
| Number of Pins | 4 Pin |
| Case/Package | TO-261-4 |
| Number of Positions | 4 Position |
| Polarity | PNP |
| Power Dissipation | 2 W |
| Breakdown Voltage (Collector to Emitter) | 40 V |
| Continuous Collector Current | 3A |
| hFE Min | 200 @1A, 1V |
| Input Power (Max) | 2 W |
| DC Current Gain (hFE) | 220 |
| Operating Temperature (Max) | 150 ℃ |
| Operating Temperature (Min) | -55 ℃ |
| Power Dissipation (Max) | 2000 mW |
| TYPE | DESCRIPTION |
|---|
| Product Lifecycle Status | Active |
| Packaging | Tape & Reel (TR) |
| Material | Silicon |
| Size-Length | 6.7 mm |
| Size-Width | 3.7 mm |
| Size-Height | 1.65 mm |
| Operating Temperature | -55℃ ~ 150℃ (TJ) |
If your circuit"s specifications require a device that can handle high levels of voltage, ON Semiconductor"s PNP NJT4030PT3G general purpose bipolar junction transistor is for you. This bipolar junction transistor"s maximum emitter base voltage is 6 V. Its maximum power dissipation is 2000 mW. This product will be shipped in tape and reel packaging so that components can be mounted effectively. It has a maximum collector emitter voltage of 40 V and a maximum emitter base voltage of 6 V. This bipolar junction transistor has an operating temperature range of -55 °C to 150 °C.
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