TYPE | DESCRIPTION |
---|
Mounting Style | Through Hole |
Number of Pins | 3 Pin |
Voltage Rating (DC) | 150 V |
Current Rating | 1.50 A |
Case/Package | TO-220-3 |
Polarity | NPN |
Power Dissipation | 25 W |
Gain Bandwidth Product | 4 MHz |
Breakdown Voltage (Collector to Emitter) | 150 V |
Continuous Collector Current | 1.5A |
hFE Min | 40 @500mA, 10V |
hFE Max | 140 |
Input Power (Max) | 25 W |
Operating Temperature (Max) | 150 ℃ |
Operating Temperature (Min) | 55 ℃ |
TYPE | DESCRIPTION |
---|
Product Lifecycle Status | Unknown |
Packaging | Bulk |
Size-Length | 10.1 mm |
Size-Width | 4.7 mm |
Size-Height | 9.4 mm |
Operating Temperature | 150℃ (TJ) |
Fairchild
4 Pages / 0.1 MByte
Fairchild
1 Pages / 0.09 MByte
Fairchild
Trans GP BJT NPN 150V 1.5A 3Pin(3+Tab) TO-220AB Bulk
Samsung
NPN Epitaxial Silicon Transistor
ON Semiconductor
Power Bipolar Transistor, 1.5A I(C), 150V V(BR)CEO, 1-Element, NPN, Silicon, TO-220AB, Plastic/Epoxy, 3 Pin
Freescale
TRANS NPN 150V 1.5A TO-220
Fairchild
Trans GP BJT NPN 150V 1.5A 3Pin(3+Tab) TO-220AB Rail
ON Semiconductor
TRANS NPN 150V 1.5A TO-220
Fairchild
Trans GP BJT NPN 150V 1.5A 3Pin(3+Tab) TO-220AB Rail
ON Semiconductor
TRANS NPN 150V 1.5A TO-220
Fairchild
Trans GP BJT NPN 150V 1.5A 3Pin(3+Tab) TO-220AB Rail
Fairchild
Trans GP BJT NPN 150V 1.5A 3Pin(3+Tab) TO-220AB Rail
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