TYPE | DESCRIPTION |
---|
Mounting Style | Through Hole |
Frequency | 50 MHz |
Number of Pins | 3 Pin |
Voltage Rating (DC) | 60.0 V |
Current Rating | 700 mA |
Case/Package | TO-226-3 |
Polarity | NPN |
Power Dissipation | 1 W |
Gain Bandwidth Product | 50 MHz |
Breakdown Voltage (Collector to Emitter) | 60 V |
Continuous Collector Current | 0.7A |
hFE Min | 120 @50mA, 2V |
hFE Max | 240 |
Input Power (Max) | 1 W |
Operating Temperature (Max) | 150 ℃ |
Operating Temperature (Min) | -55 ℃ |
Power Dissipation (Max) | 1000 mW |
TYPE | DESCRIPTION |
---|
Product Lifecycle Status | Active |
Packaging | Tape & Reel (TR) |
Material | Silicon |
Size-Length | 5.1 mm |
Size-Width | 4.1 mm |
Size-Height | 8 mm |
Operating Temperature | 150℃ (TJ) |
Bipolar (BJT) Transistor NPN 60 V 700 mA 50MHz 1 W Through Hole TO-92-3
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