TYPE | DESCRIPTION |
---|
Mounting Style | Through Hole |
Number of Pins | 3 Pin |
Voltage Rating (DC) | 120 V |
Current Rating | 1.20 A |
Case/Package | TO-126-3 |
Polarity | NPN |
Power Dissipation | 1.2 W |
Gain Bandwidth Product | 155 MHz |
Breakdown Voltage (Collector to Emitter) | 120 V |
Continuous Collector Current | 1.2A |
hFE Min | 60 |
hFE Max | 320 |
Input Power (Max) | 1.2 W |
Operating Temperature (Max) | 150 ℃ |
Operating Temperature (Min) | 55 ℃ |
TYPE | DESCRIPTION |
---|
Product Lifecycle Status | Unknown |
Packaging | Tube |
Size-Length | 8 mm |
Size-Width | 3.25 mm |
Size-Height | 11 mm |
Operating Temperature | 150℃ (TJ) |
Fairchild
5 Pages / 0.04 MByte
Fairchild
NPN Epitaxial Silicon Transistor
Samsung
NPN (AUDIO FREQUENCY/ HIGH FREQUENCY POWER AMPLIFIER)
Fairchild
Trans GP BJT NPN 160V 1.2A 3Pin(3+Tab) TO-126 Bulk
Fairchild
NPN 1.2W 160V 7A Through Hole Epitaxial Silicon Transistor - TO-126-3
ON Semiconductor
TRANSISTOR NPN 160V 1.2A TO-126
ON Semiconductor
Trans GP BJT NPN 160V 1.2A 1200mW 3Pin(3+Tab) TO-126 Bag
Fairchild
Trans GP BJT NPN 160V 1.2A 3Pin TO-126 Bulk
Fairchild
NPN Epitaxial Silicon Transistor
Part Datasheet PDF Search
72,405,303 Parts Datasheet PDF, Update more than 5,000 PDF files ervery day.