TYPE | DESCRIPTION |
---|
Mounting Style | Surface Mount |
Frequency | 11 MHz |
Number of Pins | 3 Pin |
Case/Package | TO-252-3 |
Number of Positions | 3 Position |
Power Dissipation | 50 W |
Breakdown Voltage (Collector to Emitter) | 600 V |
hFE Min | 4 @1A, 1V |
Input Power (Max) | 50 W |
DC Current Gain (hFE) | 15 |
Operating Temperature (Max) | 150 ℃ |
Operating Temperature (Min) | -65 ℃ |
Power Dissipation (Max) | 50 W |
TYPE | DESCRIPTION |
---|
Product Lifecycle Status | Active |
Packaging | Tape & Reel (TR) |
Material | Silicon |
Size-Length | 6.73 mm |
Size-Width | 6.22 mm |
Size-Height | 2.39 mm |
Operating Temperature | 150℃ (TJ) |
The KSC5502DTM is a NPN triple diffused planar Silicon Transistor offers 1200V collector base voltage and 2A collector current. It is suitable for high voltage power switch switching applications.
● Wide safe operating area
● Built-in free-wheeling diode
● Small variance in storage time
● Suitable for electronic ballast application
ON Semiconductor
11 Pages / 0.42 MByte
ON Semiconductor
18 Pages / 0.94 MByte
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7 Pages / 0.87 MByte
ON Semiconductor
1 Pages / 0.14 MByte
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