TYPE | DESCRIPTION |
---|
Mounting Style | Through Hole |
Frequency | 3 MHz |
Number of Pins | 3 Pin |
Case/Package | TO-220-3 |
Power Dissipation | 30 W |
Breakdown Voltage (Collector to Emitter) | 60 V |
hFE Min | 100 @500mA, 5V |
Input Power (Max) | 30 W |
Operating Temperature (Max) | 150 ℃ |
Operating Temperature (Min) | -55 ℃ |
Power Dissipation (Max) | 30 W |
TYPE | DESCRIPTION |
---|
Product Lifecycle Status | Active |
Packaging | Tube |
Material | Silicon |
Size-Length | 9.9 mm |
Size-Width | 4.5 mm |
Size-Height | 14.2 mm |
Operating Temperature | 150℃ (TJ) |
Bipolar (BJT) Transistor NPN 60V 3A 3MHz 30W Through Hole TO-220-3
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