TYPE | DESCRIPTION |
---|
Mounting Style | Through Hole |
Number of Pins | 3 Pin |
Case/Package | TO-126-3 |
Number of Positions | 3 Position |
Power Dissipation | 20 W |
Breakdown Voltage (Collector to Emitter) | 300 V |
hFE Min | 30 @50mA, 10V |
Input Power (Max) | 20 W |
DC Current Gain (hFE) | 30 |
Operating Temperature (Max) | 150 ℃ |
Operating Temperature (Min) | -65 ℃ |
Power Dissipation (Max) | 20000 mW |
TYPE | DESCRIPTION |
---|
Product Lifecycle Status | Active |
Packaging | Tube |
Material | Silicon |
Size-Length | 8 mm |
Size-Width | 3.25 mm |
Size-Height | 11 mm |
Operating Temperature | 150℃ (TJ) |
The KSE340STU is a NPN Epitaxial Silicon Transistor offers 300V collector base voltage and 500mA collector current. It is suitable for transformer and high voltage general purpose applications.
● High collector-emitter breakdown voltage
● Complement to KSE350
ON Semiconductor
6 Pages / 0.13 MByte
ON Semiconductor
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Kse340 Npn Epitaxial Silicon Transistor
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