TYPE | DESCRIPTION |
---|
Mounting Style | Through Hole |
Frequency | 50 MHz |
Number of Pins | 3 Pin |
Case/Package | TO-226-3 |
Number of Positions | 3 Position |
Power Dissipation | 625 mW |
Breakdown Voltage (Collector to Emitter) | 300 V |
hFE Min | 40 @30mA, 10V |
Input Power (Max) | 625 mW |
DC Current Gain (hFE) | 40 |
Operating Temperature (Max) | 150 ℃ |
Operating Temperature (Min) | -55 ℃ |
Power Dissipation (Max) | 625 mW |
TYPE | DESCRIPTION |
---|
Product Lifecycle Status | Active |
Packaging | Bag |
Material | Silicon |
Size-Length | 4.58 mm |
Size-Width | 3.86 mm |
Size-Height | 4.58 mm |
Operating Temperature | -55℃ ~ 150℃ |
Bipolar (BJT) Transistor NPN 300V 500mA 50MHz 625mW Through Hole TO-92-3
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