L6569D Datasheet PDF - ST Microelectronics

DESCRIPTION

●The device is a high voltage half bridge driver with built in oscillator. The frequency of the oscillator can be programmed using external resistor and capacitor. The internal circuitry of the device allows it to be driven also by external logic signal.

●The output drivers are designed to drive external n channel power MOSFET and IGBT. The internal logic assures a dead time [typ. 1.25µs] to avoid cross conduction of the power devices.

●Two version are available: L6569 and L6569A. They differ in the low voltage gate driver start up sequence.

●■ HIGH VOLTAGE RAIL UP TO 600V

●■ BCD OFF LINE TECHNOLOGY

●■ INTERNAL BOOTSTRAP DIODE STRUCTURE

●■ 15.6V ZENER CLAMP ON VS

●■ DRIVER CURRENT CAPABILITY:

●   - SINK CURRENT = 270mA

●   - SOURCE CURRENT = 170mA

●■ VERY LOW START UP CURRENT: 150µA

●■ UNDER VOLTAGE LOCKOUT WITH HYSTERESIS

●■ PROGRAMMABLE OSCILLATOR FREQUENCY

●■ DEAD TIME 1.25µs

●■ dV/dt IMMUNITY UP TO ±50V/ns

●■ ESD PROTECTION