TYPE | DESCRIPTION |
---|
Frequency | 960 MHz |
Number of Pins | 3 Pin |
Case/Package | PowerSO-10RF |
Power Dissipation | 170000 mW |
Output Power | 60 W |
Gain | 17.2 dB |
Test Current | 300 mA |
Input Capacitance (Ciss) | 74pF @26V(Vds) |
Operating Temperature (Max) | 165 ℃ |
Operating Temperature (Min) | -65 ℃ |
Power Dissipation (Max) | 170000 mW |
Voltage Rating | 80 V |
TYPE | DESCRIPTION |
---|
Product Lifecycle Status | Active |
Packaging | Tube |
Ideal for radio frequency environments this LET9060S RF amplifier from STMicroelectronics is perfect for amplifying and switching electronic signals. Its maximum power dissipation is 170000 mW. This RF power MOSFET has an operating temperature range of -65 °C to 165 °C. Its maximum frequency is 1000 MHz. This N channel RF power MOSFET operates in enhancement mode.
ST Microelectronics
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