TYPE | DESCRIPTION |
---|
Frequency | 960 MHz |
Number of Pins | 3 Pin |
Case/Package | PowerSO-10RF |
Power Dissipation | 170000 mW |
Output Power | 60 W |
Gain | 17.2 dB |
Test Current | 300 mA |
Input Capacitance (Ciss) | 74pF @26V(Vds) |
Operating Temperature (Max) | 165 ℃ |
Operating Temperature (Min) | -65 ℃ |
Power Dissipation (Max) | 170000 mW |
Voltage Rating | 80 V |
TYPE | DESCRIPTION |
---|
Product Lifecycle Status | Active |
Packaging | Tape & Reel (TR) |
Using semiconductor technology, this LET9060STR RF amplifier from STMicroelectronics operates at high frequencies to amplify or switch electronic signals and electrical power. Its maximum power dissipation is 170000 mW. Tape and reel packaging will encase this product during shipment, in order to ensure safe delivery and enable quick mounting of components. This RF power MOSFET has a minimum operating temperature of -65 °C and a maximum of 165 °C. Its maximum frequency is 1000 MHz. This N channel RF power MOSFET operates in enhancement mode.
ST Microelectronics
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