TYPE | DESCRIPTION |
---|
Mounting Style | Surface Mount |
Frequency | 1.00 MHz |
Number of Pins | 16 Pin |
Supply Voltage (DC) | 42.0V (max) |
Case/Package | HTSSOP-16 |
Number of Outputs | 1 Output |
Output Voltage | 1.225V ~ 40V |
Output Current | 1.5 A |
Number of Positions | 16 Position |
Quiescent Current | 1.00 mA |
Number of Regulated Outputs | 1 Output |
Switching Frequency | 1 MHz |
Topology | Buck |
Input Voltage (Max) | 42 V |
Input Voltage (Min) | 6 V |
Output Voltage (Max) | 40 V |
Output Voltage (Min) | 1.225 V |
Output Current (Max) | 1.5 A |
Operating Temperature (Max) | 125 ℃ |
Operating Temperature (Min) | -40 ℃ |
Input Voltage | 6V ~ 42V |
TYPE | DESCRIPTION |
---|
Product Lifecycle Status | Active |
Packaging | Cut Tape (CT) |
Size-Length | 5 mm |
Size-Width | 4.4 mm |
Size-Height | 0.9 mm |
Operating Temperature | -40℃ ~ 125℃ (TJ) |
The LM25575MH/NOPB is a SIMPLE SWITCHER® Step-down Switching Regulator which allows design engineers to design and optimize a robust power supply using a minimum set of components. Operating with an input voltage range of 6 to 42V, the LM25575 delivers 1.5A of continuous output current with an integrated 330mR N-channel MOSFET. The regulator utilizes an Emulated Current Mode architecture which provides inherent line regulation, tight load transient response and ease of loop compensation without the usual limitation of low-duty cycles associated with current mode regulators. The operating frequency is adjustable from 50kHz to 1MHz to allow optimization of size and efficiency. To reduce EMI, a frequency synchronization pin allows multiple IC"s of this regulator to self-synchronize or to synchronize to an external clock.
● Master or slave frequency synchronization
● Adjustable soft-start
● Emulated current mode control architecture
● Wide bandwidth error amplifier
● Built-in protection
● Green product and no Sb/Br
●This device has limited built-in ESD protection, leads should be shorted together or the device placed in conductive foam during storage or handling to prevent electrostatic damage to the MOS gates.
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