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MIXA40WB1200TED
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MIXA40WB1200TED Datasheet PDF - IXYS Semiconductor

Manufacturer:IXYS Semiconductor
Category:IGBTs
Case Package:E2-Pack
Description:Igbt Module 1200V 40A
Documentation:MIXA40WB1200TED Datasheet (8 Pages)
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MIXA40WB1200TED Specifications

TYPEDESCRIPTION
Case/PackageE2-Pack
Power Dissipation195 W
Breakdown Voltage (Collector to Emitter)1200 V
Input Power (Max)195 W
Operating Temperature (Max)125 ℃
Operating Temperature (Min)40 ℃
Power Dissipation (Max)195000 mW
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MIXA40WB1200TED Size & Package

TYPEDESCRIPTION
Product Lifecycle StatusActive
PackagingBulk
Size-Length107.5 mm
Size-Width45 mm
Size-Height17 mm
Operating Temperature-40℃ ~ 125℃ (TJ)
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MIXA40WB1200TED Documents

MIXA40WB1200TED Datasheet
IXYS Semiconductor
8 Pages / 0.21 MByte
MIXA40WB1200TED Other Datasheet PDF
IXYS Semiconductor
8 Pages / 0.23 MByte

MIXA40WB1200 Documents

MIXA40WB1200TED Datasheet PDF
IXYS Semiconductor
Igbt Module 1200V 40A
MIXA40WB1200TED Datasheet PDF
Littelfuse
Trans IGBT Module N-CH 1200V 60A 195000mW E2-Pack Box
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