| TYPE | DESCRIPTION |
|---|
| Mounting Style | Chassis |
| Case/Package | Module |
| Breakdown Voltage (Collector to Emitter) | 650 V |
| Input Power (Max) | 1750 W |
| Operating Temperature (Max) | 175 ℃ |
| Operating Temperature (Min) | -40 ℃ |
| Power Dissipation (Max) | 1750000 mW |
| TYPE | DESCRIPTION |
|---|
| Product Lifecycle Status | Active |
| Operating Temperature | -40℃ ~ 175℃ (TJ) |
IGBT Module PT Half Bridge 650V 720A 1750W Chassis Mount Module
IXYS Semiconductor
4 Pages / 0.11 MByte
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