| TYPE | DESCRIPTION |
|---|
| Mounting Style | Through Hole |
| Number of Pins | 3 Pin |
| Case/Package | TO-204-2 |
| Polarity | NPN |
| Power Dissipation | 200 W |
| Breakdown Voltage (Collector to Emitter) | 60 V |
| Continuous Collector Current | 30A |
| hFE Min | 1000 |
| Operating Temperature (Max) | 150 ℃ |
| Operating Temperature (Min) | 55 ℃ |
| Gain Bandwidth | 4MHz (Min) |
| Power Dissipation (Max) | 200000 mW |
| TYPE | DESCRIPTION |
|---|
| Product Lifecycle Status | Unknown |
| Packaging | Tray |
| Size-Length | 39.37 mm |
| Size-Width | 26.67 mm |
| Size-Height | 8.51 mm |
| Minimum Packing Quantity | 100 |
MJ11015 (PNP)
●MJ11012, MJ11016 (NPN)
●30 AMPERE DARLINGTON POWER TRANSISTORS COMPLEMENTARY SILICON 60 −120 VOLTS, 200 WATTS
●. . . for use as output devices in complementary general purpose amplifier applications.
●•High DC Current Gain hFE= 1000 (Min) @ IC −20 Adc
●•Monolithic Construction with Built−in Base Emitter Shunt Resistor
●•Junction Temperature to +200C
ON Semiconductor
4 Pages / 0.11 MByte
ON Semiconductor
4 Pages / 0.06 MByte
ON Semiconductor
1 Pages / 0.03 MByte
Part Datasheet PDF Search
72,405,303 Parts Datasheet PDF, Update more than 5,000 PDF files ervery day.
