TYPE | DESCRIPTION |
---|
Mounting Style | Through Hole |
Number of Pins | 2 Pin |
Current Rating | 50.0 mA |
Case/Package | T-1 |
Rise/Fall Time | 6 ns |
Number of Channels | 1 Channel |
Number of Positions | 2 Position |
Wavelength | 850 nm |
Viewing Angle | 15° |
Peak Wavelength | 850 nm |
Polarity | NPN |
Power Dissipation | 150 mW |
Power Consumption | 150 mW |
Rise Time | 6 µs |
Breakdown Voltage (Collector to Emitter) | 70.0 V |
Fall Time | 5 µs |
Operating Temperature (Max) | 100 ℃ |
Power Dissipation (Max) | 150 mW |
TYPE | DESCRIPTION |
---|
Product Lifecycle Status | Active |
Packaging | Bulk |
Material | Silicon |
Size-Length | 5.75 mm |
Size-Width | 5.75 mm |
Size-Height | 8 mm |
The BPV11 is a clear Silicon NPN Phototransistor with high radiant sensitivity and base terminal. It is sensitive to visible and near infrared radiation. It has high photo and radiant sensitivity and a base terminal is connected.
● Fast response times
● ±15° Angle of half sensitivity
VISHAY
5 Pages / 0.1 MByte
VISHAY
7 Pages / 0.13 MByte
VISHAY
6 Pages / 0.09 MByte
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